Fabricant: Infineon
Catégorie du produit: MOSFET
Technologie: Si
Style de montage: Through Hole
Package/Boîte: TO-247-3
Nombre de canaux: 1 Channel
Polarité du transistor: N-Channel
Vds – Tension de rupture drain-source: 200 V
Id – Courant continu de fuite: 50 A
Rds On – Résistance drain-source: 40 mOhms
Vgs – Tension grille-source: 20 V
Température de fonctionnement min.: – 55 C
Température de fonctionnement max.: + 175 C
Pd – Dissipation d’énergie : 300 W
Configuration: Single
Mode canal: Enhancement
Hauteur: 20.7 mm
Longueur: 15.87 mm
Type de transistor: 1 N-Channel
Largeur: 5.31 mm
Marque: Infineon / IR
Temps de descente: 48 ns
Type de produit: MOSFET
Temps de montée: 60 ns
Sous-catégorie: MOSFETs
Délai de désactivation type: 55 ns
Délai d’activation standard: 17 ns
Poids de l”unité: 38 g
Catégorie : Transistors
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